HT Semiconductor 2sb1440 free download

File name 2sb1440.pdf

2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification 2. COLLECTOR 1 Complementary to 2SD2185 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -1 A hFE1 VCE=-2V, IC=-200mA 120 340 DC current gain hFE2 VCE=-2V, IC=-1A 60 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.3 V Base- emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1..2 V Transition frequency fT VCE=-10V, IC=50mA, f=200MHz 80 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz